AUIRFSA8409-7P

Infineon Technologies

AUIRFSA8409-7P

Datasheet

Analog & Power

MOSFET N-CH 40V 523A D2PAK

ObsoleteTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.69mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13975 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C523A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101