AUIRF7343Q

Infineon Technologies

AUIRF7343Q

Datasheet

Analog & Power

MOSFET N/P-CH 55V 4.7A 8SOIC

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 4.7A, 10V
Base Product NumberAUIRF7343
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage55V
Current - Continuous Drain (Id) @ 25°C4.7A, 3.4A
Power - Max2W

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)