AUIRF1010ZL

Infineon Technologies

AUIRF1010ZL

Analog & Power

AUIRF1010 - 55V-60V N-CHANNEL AU

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 75A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2840 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Max Power Dissipation140W (Tc)

Mechanical

PackageBulk
Supplier Device PackageTO-262

Environmental

Operating Temperature-55°C ~ 175°C (TJ)