AIMW120R060M1HXKSA1

Infineon Technologies

AIMW120R060M1HXKSA1

Datasheet

Analog & Power

1200V COOLSIC MOSFET PG-TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs78mOhm @ 13A, 18V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 800 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, CoolSiC™
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+23V, -7V
Vgs(th) (Max) @ Id5.7V @ 5.6mA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)18V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

Environmental

Operating Temperature-55°C~175°C(TJ)