AIMW120R045M1XKSA1

Infineon Technologies

AIMW120R045M1XKSA1

Datasheet

Analog & Power

SICFET N-CH 1200V 52A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs59mOhm @ 20A, 15V
Base Product NumberAIMW120
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 800 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, CoolSiC™
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+20V, -7V
Vgs(th) (Max) @ Id5.7V @ 10mA

Electrical

Drain-to-Source Voltage1200 V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Max Power Dissipation228W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

Environmental

Operating Temperature-40°C~175°C(TJ)