62-0136PBF

Infineon Technologies

62-0136PBF

Analog & Power

MOSFET N-CH 30V 19A 8-SOIC

ObsoleteAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 19A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3710 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.25V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Max Power Dissipation2.5W

Mechanical

PackageTube

Environmental

Operating Temperature-55°C ~ 150°C (TA)