62-0095PBF

Infineon Technologies

62-0095PBF

Analog & Power

MOSFET N-CH 20V 10A/12A 8SOIC

ObsoleteAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.4mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.55V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 12A (Tc)
Max Power Dissipation2W

Mechanical

PackageTube

Environmental

Operating Temperature-55°C ~ 150°C (TJ)