2N7002DWH6327XTSA1

Infineon Technologies

2N7002DWH6327XTSA1

Datasheet

Analog & Power

MOSFET 2N-CH 60V 0.3A SOT363

Active6-VSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
Base Product Number2N7002
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C300mA
Power - Max500mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)