RFP8N18L

Harris Corporation

RFP8N18L

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs500mOhm @ 4A, 5V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage180 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation60W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~150°C(TJ)