RFP45N02L

Harris Corporation

RFP45N02L

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 45A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Max Power Dissipation90W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature-55°C~175°C(TJ)