RFP2N10

Harris Corporation

RFP2N10

Analog & Power

N-CHANNEL, MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.05Ohm @ 2A, 5V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Max Power Dissipation25W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature-55°C~150°C(TJ)