RFP17N06L

Harris Corporation

RFP17N06L

Analog & Power

N-CHANNEL, MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs130mOhm @ 17A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 30 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
PackagingBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Max Power Dissipation60W (Tc)

Mechanical

Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)