RFP10N15L

Harris Corporation

RFP10N15L

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs300mOhm @ 5A, 5V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation60W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C~150°C(TJ)