Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 25 V |
| Manufacturer | Harris Corporation |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Max Power Dissipation | 125W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|