IRFD9123

Harris Corporation

IRFD9123

Analog & Power

MOSFET P-CH 100V 1A 4DIP

Obsolete4-DIP (0.300", 7.62mm)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs600mOhm @ 600mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 25 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C1A (Ta)

Mechanical

PackageTube
Package / Case4-DIP (0.300", 7.62mm)
Supplier Device Package4-HVMDIP