IRFD9113

Harris Corporation

IRFD9113

Analog & Power

0.6A, -80V, 1.6 OHM, P-CHANNEL

Active4-DIP (0.300", 7.62mm)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.6Ohm @ 300mA, 10V
Base Product NumberIRFD9113
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)

Mechanical

PackageBulk
Package / Case4-DIP (0.300", 7.62mm)
Supplier Device Package4-DIP, Hexdip, HVMDIP