IRFD123

Name: IRFD123
Brand: Harris Corporation

Analog & Power

MOSFET N-CH 100V 1.3A 4DIP

Obsolete4-DIP (0.300", 7.62mm)Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Manufacturer	Harris Corporation
Mounting Type	Through Hole
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-to-Source Voltage	100 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)