2N6895

Harris Corporation

2N6895

Analog & Power

P-CHANNEL, MOSFET

ActiveTO-205AF Metal CanAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.65Ohm @ 740mA, 10V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V
ManufacturerHarris Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.16A (Tc)
Max Power Dissipation8.33W (Tc)

Mechanical

PackageBulk
Package / CaseTO-205AF Metal Can
Supplier Device PackageTO-205AF (TO-39)

Environmental

Operating Temperature-55°C~150°C(TJ)