GSFN2306

Good-Ark Semiconductor

GSFN2306

Datasheet

Analog & Power

MOSFET, N-CH, SINGLE, 65A, 20V

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.4mOhm @ 20A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2790 pF @ 10 V
ManufacturerGood-Ark Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Max Power Dissipation44.6W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device Package8-PPAK (3.05x3.08)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)