GSF2301

Good-Ark Semiconductor

GSF2301

Datasheet

Analog & Power

MOSFET, P-CH, SINGLE, -3A, -20V

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs110mOhm @ 3A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 10 V
ManufacturerGood-Ark Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Environmental

Operating Temperature-55°C ~ 150°C (TJ)