GT55N06D5

Goford Semiconductor

GT55N06D5

Datasheet

Analog & Power

MOSFET N-CH 60V 45A DFN5*6-8L

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 14A, 10V
FET FeatureStandard
FET TypeN-Channel
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesSGT
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Max Power Dissipation69W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (4.9x5.75)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)