GT110N06S

Goford Semiconductor

GT110N06S

Datasheet

Analog & Power

MOSFET N-CH 60V 14A SOP-8

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 14A, 10V
FET FeatureStandard
FET TypeN-Channel
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesSGT
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Max Power Dissipation3W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)