GT110N06D5

Goford Semiconductor

GT110N06D5

Datasheet

Analog & Power

N60V, 45A,RD<11M@10V,VTH1.0V~2.4

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 14A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1202 pF @ 30 V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesGT
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Max Power Dissipation69W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-DFN (4.9x5.75)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)