GT100N12T

Name: GT100N12T
Brand: Goford Semiconductor

Analog & Power

N120V,RD(MAX)<10M@10V,VTH2.5V~3

ActiveTO-220-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	10mOhm @ 35A, 10V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 60 V
Manufacturer	Goford Semiconductor
Mounting Type	Through Hole
Product Status	Active
Series	SGT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-to-Source Voltage	120 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Max Power Dissipation	100W (Tc)

Operating Temperature	-55°C ~ 150°C (TJ)