GT100N12D5

Name: GT100N12D5
Brand: Goford Semiconductor

Analog & Power

N120V,RD(MAX)<10M@10V,VTH2.5V~3

Active8-PowerVDFNAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	10mOhm @ 35A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 60 V
Manufacturer	Goford Semiconductor
Mounting Type	Surface Mount
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA

Drain-to-Source Voltage	120 V
Current - Continuous Drain (Id) @ 25°C	70A
Max Power Dissipation	120W

Operating Temperature	-55°C~150°C(TJ)