GT1003D

Name: GT1003D
Brand: Goford Semiconductor

Analog & Power

N100V,RD(MAX)<130M@10V,RD(MAX)<1

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	130mOhm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	212 pF @ 50 V
Manufacturer	Goford Semiconductor
Mounting Type	Surface Mount
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.6V @ 250µA

Drain-to-Source Voltage	100 V
Current - Continuous Drain (Id) @ 25°C	3A
Max Power Dissipation	2W

Operating Temperature	-55°C~150°C(TJ)