GT090N06D52

Goford Semiconductor

GT090N06D52

Datasheet

Analog & Power

MOSFET 2N-CH 60V 40A 8DFN

Active8-DFN (4.9x5.75)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 14A, 10V
Base Product NumberGT090N06
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1011pF @ 30V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesSGT
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Power - Max62W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-DFN (4.9x5.75)
Supplier Device Package8-PowerTDFN

Environmental

Operating Temperature-55°C ~ 150°C (TJ)