GT045N10M

Goford Semiconductor

GT045N10M

Datasheet

Analog & Power

MOSFET N-CH 100V 120A TO-263

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 30A, 10V
FET FeatureStandard
FET TypeN-Channel
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesSGT
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation180W (Tc)

Mechanical

PackageTape & Reel (TR)
Supplier Device PackageTO-263

Environmental

Operating Temperature-55°C ~ 150°C (TJ)