GC20N65F

Goford Semiconductor

GC20N65F

Datasheet

Analog & Power

N650V,RD(MAX)<170M@10V,VTH2.5V~4

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
FET FeatureStandard
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1724 pF @ 100 V
ManufacturerGoford Semiconductor
Mounting TypeThrough Hole
Product StatusActive
SeriesCool MOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation40W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F

Environmental

Operating Temperature-55°C ~ 150°C (TJ)