G60N04D52

Goford Semiconductor

G60N04D52

Datasheet

Analog & Power

MOSFET 40V 35A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Base Product NumberG60
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1998pF @ 20V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Power - Max20W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (4.9x5.75)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)