G4953S

Goford Semiconductor

G4953S

Datasheet

Analog & Power

MOSFET 2P-CH 30V 5A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 5A, 10V
Base Product NumberG4953
Configuration2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 15V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Power - Max1.6W (Tc)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)