G4616

Goford Semiconductor

G4616

Datasheet

Analog & Power

MOSFET N/P-CH 40V 8A/7A 8SOP

Active8-SOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Base Product NumberG461
ConfigurationN and P-Channel Complementary
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V, 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds415pF @ 20V, 520pF @ 20V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40V
Current - Continuous Drain (Id) @ 25°C8A (Tc), 7A (Tc)
Power - Max2W (Tc), 2.8W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOP
Supplier Device Package8-SOIC (0.154", 3.90mm Width)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)