Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 15 V |
| Manufacturer | Goford Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.6A |
| Max Power Dissipation | 1.2W |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|