G33N03D3

Goford Semiconductor

G33N03D3

Analog & Power

MOSFET 2N-CH 30V 30A 8DFN

Active8-DFN (3x3)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 16A, 10V
Base Product NumberG33N
Configuration2 N-Channel (Dual)
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds837pF @ 15V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Power - Max13W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-DFN (3x3)
Supplier Device Package8-PowerVDFN

Environmental

Operating Temperature-55°C ~ 150°C (TJ)