G30N03D3

Name: G30N03D3
Brand: Goford Semiconductor

Analog & Power

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Active8-PowerVDFNAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	825 pF @ 15 V
Manufacturer	Goford Semiconductor
Mounting Type	Surface Mount
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Drain-to-Source Voltage	30 V
Current - Continuous Drain (Id) @ 25°C	30A
Max Power Dissipation	24W

Operating Temperature	-55°C~150°C(TJ)