G30N02T

Name: G30N02T
Brand: Goford Semiconductor

Analog & Power

N20V,RD(MAX)<13M@4.5V,VTH0.5V~1

ActiveTO-220-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	13mOhm @ 20A, 4.5V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 10 V
Manufacturer	Goford Semiconductor
Mounting Type	Through Hole
Product Status	Active
Series	TrenchFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.2V @ 250µA

Drain-to-Source Voltage	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Max Power Dissipation	40W (Tc)

Operating Temperature	-55°C ~ 150°C (TJ)