G2K3N10L6

Goford Semiconductor

G2K3N10L6

Datasheet

Analog & Power

MOSFET 2N-CH 100V 3A SOT23-6L

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs220mOhm @ 2A, 10V
Base Product NumberG2K3N
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds536pF @ 50V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Power - Max1.67W (Tc)

Mechanical

Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6L

Environmental

Operating Temperature-55°C ~ 150°C (TJ)