G250N03IE

Goford Semiconductor

G250N03IE

Datasheet

Analog & Power

MOSFET N-CH ESD 30V 5.3A SOT-23

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 4A, 10V
FET FeatureStandard
FET TypeN-Channel
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Max Power Dissipation1.4W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6L

Environmental

Operating Temperature-55°C ~ 150°C (TJ)