G2312

Name: G2312
Brand: Goford Semiconductor

Analog & Power

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	18mOhm @ 4.2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	780 pF @ 10 V
Manufacturer	Goford Semiconductor
Mounting Type	Surface Mount
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1V @ 250µA

Drain-to-Source Voltage	20 V
Current - Continuous Drain (Id) @ 25°C	5A
Max Power Dissipation	1.25W

Operating Temperature	-55°C~150°C(TJ)