G230P06T

Name: G230P06T
Brand: Goford Semiconductor

Analog & Power

P-60V,-60A,RD(MAX)<20M@-10V,VTH

ActiveTO-220-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	20mOhm @ 10A, 10V
FET Feature	Standard
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4499 pF @ 30 V
Manufacturer	Goford Semiconductor
Mounting Type	Through Hole
Product Status	Active
Series	TrenchFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-to-Source Voltage	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Max Power Dissipation	115W (Tc)

Operating Temperature	-55°C ~ 150°C (TJ)