G2003A

Name: G2003A
Brand: Goford Semiconductor

Analog & Power

N190V, 3A,RD<540M@10V,VTH1.0V~3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	540mOhm @ 2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 25 V
Manufacturer	Goford Semiconductor
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
Series	TrenchFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

Drain-to-Source Voltage	190 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Max Power Dissipation	1.8W (Tc)

Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

Operating Temperature	-55°C ~ 150°C (TJ)