G2002A

Goford Semiconductor

G2002A

Datasheet

Analog & Power

MOSFET N-CH 200V 2A SOT-23-6L

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs540mOhm @ 1A, 10V
FET FeatureStandard
FET TypeN-Channel
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Max Power Dissipation2.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6L

Environmental

Operating Temperature-55°C ~ 150°C (TJ)