G1NP02LLE

Goford Semiconductor

G1NP02LLE

Datasheet

Analog & Power

MOSFET 20V 1.3A/1.1A SOT23-6L

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs1nC @ 4.5V, 1.22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds146pF @ 10V, 177pF @ 10V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA, 800mV @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C1.3A (Tc), 1.1A (Tc)
Power - Max1.25W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6L

Environmental

Operating Temperature-55°C ~ 150°C (TJ)