Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1A, 10V |
|---|---|
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 594pF @ 30V |
| Manufacturer | Goford Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Power - Max | 2W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|