G180N06S2

Goford Semiconductor

G180N06S2

Datasheet

Analog & Power

MOSFET 2N-CH 60V 8A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 6A, 10V
Base Product NumberG180
Configuration2 N-Channel (Dual)
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2330pF @ 30V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Power - Max2W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)