Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
|---|---|
| FET Feature | Standard |
| FET Type | P-Channel |
| Manufacturer | Goford Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Max Power Dissipation | 40W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|