G120P03S2

Goford Semiconductor

G120P03S2

Datasheet

Analog & Power

MOSFET 30V 16A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
Base Product NumberG120
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2835pF @ 15V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Power - Max1.4W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)