Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 26mOhm @ 10A, 4.5V |
|---|---|
| FET Feature | Standard |
| FET Type | P-Channel |
| Manufacturer | Goford Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Max Power Dissipation | 20W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|