G100C04D52

Goford Semiconductor

G100C04D52

Datasheet

Analog & Power

MOSFET 40V 40A/24A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2213pF @ 20V, 2451pF @ 20V
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40V
Current - Continuous Drain (Id) @ 25°C40A (Tc), 24A (Tc)
Power - Max65W (Tc), 50W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (4.9x5.75)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)