G08P06D3

Goford Semiconductor

G08P06D3

Datasheet

Analog & Power

MOSFET P-CH 60V 8A DFN3*3-8L

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs52mOhm @ 6A, 10V
FET FeatureStandard
FET TypeP-Channel
ManufacturerGoford Semiconductor
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation32W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-DFN (3.15x3.05)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)